Title :
In0.53Ga0.47As submicrometer FET´s Grown by MBE
Author :
Chai, Y.G. ; Yeats, R.
Author_Institution :
Varian Associates, Inc., Palo Alto, CA
fDate :
7/1/1983 12:00:00 AM
Abstract :
We describe the fabrication process for InGaAs submicrometer gate JFET´s, using Be ion implantation and wet chemical etching. A gate length as small as 0.5 µm can be formed by this technique. Such FET´s made on MBE-grown material bad a dc trans-conductance as high as 85 mS/mm and showed a high power-handling capability.
Keywords :
Doping; Electrons; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Ion implantation; Microwave devices; Molecular beam epitaxial growth; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25722
