Title :
Integrated frequency synthesiser in SiGe BiCMOS technology for 60 and 24 GHz wireless applications
Author :
Herzel, F. ; Glisic, S. ; Winkler, W.
Abstract :
A fully integrated silicon-based frequency synthesiser for 60 and 24 GHz applications is presented. The relative frequency tuning range is 5%, and the total power dissipation is 135 mW at 2.3 V supply voltage. Phase noise at 48 GHz is lower than -98 dBc/Hz at 1 MHz offset over the whole tuning range, which is 8 dB lower than in all previous silicon-based solutions
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency synthesizers; microwave receivers; millimetre wave receivers; phase noise; radio receivers; 135 mW; 2.3 V; 24 GHz; 60 GHz; SiGe; SiGe BiCMOS technology; integrated frequency synthesiser; phase noise; silicon-based frequency synthesiser; wireless applications;
Journal_Title :
Electronics Letters
