Title :
Vertical-cavity surface-emitting lasers with lateral carrier confinement
Author :
Lofgreen, D.D. ; Chang, Y.-C. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA
Abstract :
A novel method to reduce threshold currents in vertical-cavity surface-emitting lasers (VCSELs) is proposed. By using selective quantum well intermixing, lateral heterobarriers are created that prevent carriers from diffusing away from the optical modes. Our devices show 40% reduction of threshold currents with the implementation of lateral carrier confinement
Keywords :
laser modes; quantum well lasers; surface emitting lasers; VCSEL; lateral carrier confinement; lateral heterobarriers; selective quantum well intermixing; threshold currents; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
