DocumentCode :
1089916
Title :
Separated multi clad-layer stripe-geometry GaAlAs DH laser
Author :
Ishikawa, Hiroshi ; Hanamitsu, Hiyoshi ; Takagi, Nobuyuki ; Fujiwara, Takao ; Takusagawa, Masahito
Author_Institution :
Fijitsu Lab., Ltd., Atsugi, Japan
Volume :
17
Issue :
7
fYear :
1981
fDate :
7/1/1981 12:00:00 AM
Firstpage :
1226
Lastpage :
1234
Abstract :
The fabrication process, the analysis of the waveguiding property, and the lasing characteristics of a separated multiclad-layer (SML) stripe-geometry laser for a 0.8 μm wavelength are described. The SML stripe geometry enables us to grow at 820°C a flat active layer without deformation of the shape of the grow by melt-etching. The analysis shows that the built-in waveguide is the effective refractive index step waveguide, in contrast to the loss step waveguide of the CSP laser, and we can fabricate a laser with small stripewidth. The fundamental transverse and longitudinal single-mode lasing were obtained with CW threshold current of 45-70 mA for the stripewidth 3-6 \\mu m. The damped relaxation oscillation and the small spectral broadening when modulated by 400 Mbits/s RZ random pulses were obtained. A small increase rate of the driving current when operated at 50°C with 5 mW/facet output was confirmed.
Keywords :
Gallium materials/lasers; DH-HEMTs; Geometrical optics; Laser modes; Laser stability; Optical device fabrication; Optical refraction; Optical waveguides; Refractive index; Synthetic aperture sonar; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071265
Filename :
1071265
Link To Document :
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