Island-edge effects of transistors fabricated in large-area laser micro-zone crystallized Si on insulator

Device-quality isolated silicon layers on crystalline silicon wafers have been grown by laser micro-zone crystallization. Device fabrication revealed that the lateral isolation of devices is nontrivial. Transistors with various edge configurations exhibit very different electrical characteristics. Parasitic side transistors in island-edge devices are responsible for an early turn-on in n-channel transistors. Their effect has to be taken into account for mobility calculations.