Title :
A silicon phototransistor with a MIS tunnel junction emitter
Author :
Shieh, C.-L. ; Wagner, S. ; Jackel, L.D. ; Howard, R.E. ; Hu, E.L.
Author_Institution :
Princeton University, Princeton, NJ
fDate :
8/1/1983 12:00:00 AM
Abstract :
We have fabricated a silicon phototransistor using low-temperature processing. The emitter of the bipolar transistor is an Al-SiO2-p-Si tunnel junction. The quantum efficiency gain is 200 at λ = 0.6328 µm. The common-emitter current gain of the analogous three-terminal metal-insulator-semiconductor (MIS) transistor also is 200. This demonstrates the high minority-carrier injection efficiency of the MIS emitter.
Keywords :
Artificial intelligence; Metal-insulator structures; Phototransistors; Plasma applications; Plasma devices; Plasma stability; Plasma temperature; Schottky barriers; Schottky diodes; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25737
