DocumentCode :
1090010
Title :
Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors
Author :
Chen, Tzu Chieh ; Lin, Yueh Ting ; Lin, Chung Yi ; Chen, W.C. ; Chen, Meei Ru ; Kao, Hui-Ling ; Chyi, J. -I ; Hsu, C.-H.
Author_Institution :
Cluing Yuan Christian Univ., Chungli
Volume :
55
Issue :
2
fYear :
2008
fDate :
2/1/2008 12:00:00 AM
Firstpage :
489
Lastpage :
493
Abstract :
Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300degC. Surface acoustic wave (SAW) devices fabricated on AIN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire- based SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AIN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the Ill-nitrides.
Keywords :
III-V semiconductors; aluminium compounds; sapphire; semiconductor thin films; sputtering; surface acoustic wave oscillators; ultraviolet detectors; wide band gap semiconductors; AIN/GaN/sapphire; AlN; GaN-Al2O3; UV sensors; helicon sputtering; surface acoustic wave oscillators; temperature 300 degC; Acoustic sensors; Acoustic waves; Frequency; Gallium nitride; Oscillators; Sensor phenomena and characterization; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Temperature sensors;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2008.666
Filename :
4460882
Link To Document :
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