Title :
High frequency (f=2.37 GHz) room temperature operation of 1.55 μm AlN/GaN-based intersubband detector
Author :
Giorgetta, F.R. ; Baumann, E. ; Guillot, F. ; Monroy, E. ; Hofstetter, D.
Author_Institution :
Inst. of Phys., Univ. of Neuchatel
Abstract :
The fabrication and high frequency operation of a room temperature 1.55 mum intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor superlattices; wide band gap semiconductors; 1.55 micron; 2.37 GHz; AlN-GaN; QWIP structure; high frequency room temperature operation; intersubband detector; photoconductive quantum well infrared photodetectors; photovoltaic device; sinusoidally modulated laser beam detection;
Journal_Title :
Electronics Letters
