• DocumentCode
    1090089
  • Title

    InP MISFET´s with plasma anodic Al2O3and interlayed native Oxide gate insulators

  • Author

    Matsui, M. ; Hirayama, Y. ; Arai, F. ; Sugano, T.

  • Author_Institution
    University of Tokyo, Tokyo, Japan
  • Volume
    4
  • Issue
    9
  • fYear
    1983
  • fDate
    9/1/1983 12:00:00 AM
  • Firstpage
    308
  • Lastpage
    310
  • Abstract
    InP MISFET´s, with native oxide film interlayed between plasma anodic Al2O3film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 µs ∼ 5 × 104s. The effective electron mobility is 2100 ∼ 2600 cm2/V.s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.
  • Keywords
    Annealing; Diodes; Etching; Hysteresis; Indium phosphide; Insulation; Plasma applications; Plasma temperature; Substrates; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25744
  • Filename
    1483488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090089