Title :
An optically defined 1.3-µm NMOS ring oscillator
Author :
Sunami, H. ; Shimohigashi, K. ; Hashimoto, N.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
9/1/1983 12:00:00 AM
Abstract :
n-channel enhancement/depletion (E/D) gate MOS ring-oscillators (RO) based on 1.3- and 2-µm layout design rules have been fabricated using 10:1 reduction projection aligner. A delay/stage of 80 ps and a power-delay product of 3.6 fJ have been obtained for a 401-stage RO consisting of 1.3-µm feature-size devices.
Keywords :
Electron optics; MOS devices; Optical devices; Optical films; Ring oscillators; Threshold voltage; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25745
