DocumentCode
1090096
Title
An optically defined 1.3-µm NMOS ring oscillator
Author
Sunami, H. ; Shimohigashi, K. ; Hashimoto, N.
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
4
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
311
Lastpage
313
Abstract
n-channel enhancement/depletion (E/D) gate MOS ring-oscillators (RO) based on 1.3- and 2-µm layout design rules have been fabricated using 10:1 reduction projection aligner. A delay/stage of 80 ps and a power-delay product of 3.6 fJ have been obtained for a 401-stage RO consisting of 1.3-µm feature-size devices.
Keywords
Electron optics; MOS devices; Optical devices; Optical films; Ring oscillators; Threshold voltage; Wet etching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1983.25745
Filename
1483489
Link To Document