DocumentCode :
1090106
Title :
p+-n junction formed by dual implantation of Zn and As in GaAs junction field-effect transistors
Author :
Taira, K. ; Kasahara, J. ; Kato, Y. ; Arai, M. ; Watanabe, N.
Author_Institution :
Sony Corporation Research
Volume :
4
Issue :
9
fYear :
1983
fDate :
9/1/1983 12:00:00 AM
Firstpage :
314
Lastpage :
316
Abstract :
The performance of a p+-n junction formed in GaAs by dual implantation of Zn and As was investigated. The transconductance in linear operation of the junction field-effect transistors (JFET´s) in which the p+-gate was formed by the dual implantation was measured and analyzed on a simple one-dimensional model. As the dose of As was increased, the devices showed negatively shifted pinchoff voltage and higher transconductance. It was found that the co-implantation of As significantly decreased the width of the compensated layer in the junction, which improved the JFET´s performance.
Keywords :
Annealing; Capacitance measurement; FETs; Gallium arsenide; Gold; Ion implantation; Ohmic contacts; P-n junctions; Transconductance; Zinc;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25746
Filename :
1483490
Link To Document :
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