Title :
A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements
Author :
Wagner, L.F. ; Young, R.W. ; Sugerman, A.
Author_Institution :
IBM General Technology Division, Hopewell Junction, NY
fDate :
9/1/1983 12:00:00 AM
Abstract :
An expression is derived which relates the barrier height and ideality factor of a Schottky diode as determined from I-V measurements. The expression agrees well with data from PtSi diodes formed with a range of Pt thicknesses.
Keywords :
Charge measurement; Current measurement; Data analysis; Electric resistance; Electrical resistance measurement; Neodymium; Schottky diodes; Surface fitting; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25748
