Title :
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
Author :
Asbeck, P.M. ; Chang, Mau-Chung F. ; Higgins, J.A. ; Sheng, N.H. ; Sullivan, G.J. ; Wang, Keh-Chung
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors (HBTs) and their prospects for application in various areas are discussed. The microwave and digital performance status of HBTs is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device manufacture; solid-state microwave devices; 200 GHz; 26.9 GHz; GaAlAs-GaAs; HBTs; digital performance; frequency divider operation; heterojunction bipolar transistors; manufacturing; maximum frequency of oscillation; microwave performance; Bipolar transistors; Doping; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Manufacturing; Microwave transistors; Thickness control; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
