Title :
The development of heterojunction integrated injection logic
Author :
Yuan, Han-tzong ; Shih, Hung-Dah ; Delaney, Joseph ; Fuller, Clyde
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
The development of heterojunction integrated injection logic (HI 2L) since 1982 is described. The baseline process that uses AlGaAs/GaAs emitter-down HBTs (heterojunction bipolar transistors) as the switching element is presented. Two sets of design rules, one using a 7.0-μm collector and 8.0-μm metal pitch and another using a 5.0-μm collector and 5.0-μm metal pitch, have been developed for the pilot line circuit fabrication. Typical propagation delays obtained for a fan-out=4 HI2L gate using the 7.0- and 5.0-μm collector processes are 250 and 150 ps, respectively, at a power dissipation of 5 mW per gate. LSI and VLSI circuits as complex as 4 K-gate arrays and 32-bit MIPS microprocessors have been fabricated successfully using the HI2L technology
Keywords :
III-V semiconductors; VLSI; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated injection logic; integrated logic circuits; logic arrays; 150 ps; 250 ps; 32 bit; 5 mW; AlGaAs-GaAs; LSI; MIPS microprocessors; VLSI; baseline process; collector; design rules; emitter-down HBTs; fan-out; gate arrays; heterojunction integrated injection logic; metal pitch; power dissipation; propagation delays; switching element; Circuits; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Logic; Microprocessors; Power dissipation; Propagation delay; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
