Title :
Modeling thermal effects on MOS I-V characteristics
Author :
Sharma, D.K. ; Ramanathan, K.V.
Author_Institution :
TATA Institute of Fundamental Research Kolaba, Bombay, India
fDate :
10/1/1983 12:00:00 AM
Abstract :
The temperature distribution in a MOS transistor caused by power dissipation within the device has been calculated by solving the heat diffusion equation. Using this temperature distribution, IV characteristics of a MOS device as modified by thermal effects are calculated. The predicted behavior matches reported experimental observations; in particular, the negative dynamic resistance seen in the saturation region of devices operating at elevated power densities.
Keywords :
Equations; MOS devices; MOSFETs; Power dissipation; Power system modeling; Solid state circuits; Temperature dependence; Temperature distribution; Thermal conductivity; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25764
