DocumentCode
1090323
Title
A high speed optoelectronic matrix switch using heterojunction switching photodiodes
Author
Hara, Elmer H. ; Machida, Susumu ; Ikeda, Masahiro ; Kanbe, Hiroshi ; Kimura, Tatswa
Volume
17
Issue
8
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
1539
Lastpage
1546
Abstract
Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3 × 3 optoelectronic matrix switch. Biconical taper type optical power splitters were used to distribute the signals to the matrix switch crosspoints. Isolation and crosstalk losses were better than 63 dB over a frequency range of 10 Hz-400 MHz and 400 Mbit/s NRZ digital signals were switched with switching times shorter than 30 ns.
Keywords
Electrooptic switches; Gallium materials/devices; Photodiodes; Semiconductor diode switches; Frequency; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical crosstalk; Optical losses; Optical signal processing; Optical switches; Photodiodes;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071301
Filename
1071301
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