Title :
A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD
Author :
Miura, S. ; Wada, O. ; Hamaguchi, H. ; Ito, M. ; Makiuchi, M. ; Nakai, K. ; Sakurai, T.
Author_Institution :
Fujitsu Limited, Kanagawa, Japan
fDate :
10/1/1983 12:00:00 AM
Abstract :
An AlGaAs/GaAs p-i-n photodiode and a GaAs FET have been monolithically integrated on a GaAs substrate by using the metal-organic chemical vapor deposition (MOCVD) technique and by applying a new interconnection technique. A current amplification characteristic consistent to the device parameters has been demonstrated. This result indicates a suitability of MOCVD to realize the monolithic integration of p-i-n/FET photoreceiver.
Keywords :
Chemical vapor deposition; Etching; FETs; Gallium arsenide; Gold; Integrated circuit interconnections; MOCVD; PIN photodiodes; Substrates; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25769
