• DocumentCode
    1090377
  • Title

    Formation of titanium silicide films by rapid thermal processing

  • Author

    Powell, R.A. ; Chow, R. ; Thridandam, C. ; Fulks, Ronald T. ; Blech, I.A. ; Pan, J.-D.T.

  • Author_Institution
    Varian Associates, Inc., Palo Alto, CA
  • Volume
    4
  • Issue
    10
  • fYear
    1983
  • fDate
    10/1/1983 12:00:00 AM
  • Firstpage
    380
  • Lastpage
    382
  • Abstract
    Titanium silicide thin films, sputter deposited from a composite silicide target, have been rapidly sintered in ∼10 s to produce extremely uniform highly conductive layers (≲ Ω/sq plusmn; 1 percent over a 4-in wafer) with film stress comparable to furnace-annealed films. Such films are suitable for VLSI applications. In addition, silicide formation and activation of ion-implanted species in adjacent Si regions can be accomplished in the same rapid processing step without significant dopant redistribution.
  • Keywords
    Conductive films; Conductivity; Electrodes; Grain size; Optical films; Rapid thermal annealing; Rapid thermal processing; Silicides; Titanium; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1983.25771
  • Filename
    1483515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090377