Title :
Millimeter-wave GaAs distributed IMPATT diodes
Author :
Bayraktaroglu, B. ; Shih, H.D.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
11/1/1983 12:00:00 AM
Abstract :
Millimeter-wave oscillations were obtained in distributed GaAs IMPATT diodes prepared by molecular beam epitaxy (MBE). Both single-drift-region and double-drift-region structures were used to fabricate various length devices, up to 1.25 mm, to investigate oscillation frequency dependence on device length. Output power levels of 1.5 and 0.5 W were obtained at 22 and 50 GHz, respectively, using 500-ns pulses. The highest frequency of oscillation observed was 89 GHz.
Keywords :
Bonding; Diodes; Equivalent circuits; Frequency; Gallium arsenide; Millimeter wave circuits; Millimeter wave technology; Molecular beam epitaxial growth; Power generation; Resonance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25777