Title :
Monolithic integration of GaAs-waveguide optical intensity modulator with MESFET drive electronics
Author :
Bossi, D.E. ; Basilica, R.P.
fDate :
4/9/1992 12:00:00 AM
Abstract :
A high-performance GaAs electro-optical waveguide modulator with monolithically integrated MESFET drive electronics is reported. High-contrast (30:1) optical intensity modulation at lambda =1.15 mu m is achieved for an input voltage swing of 0.26 V in a low-loss 8 mm-electrode Mach-Zehnder device driven by an on-chip MESFET amplifier.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electro-optical devices; gallium arsenide; integrated optoelectronics; optical modulation; 0.26 V; 1.15 micron; GaAs; MESFET drive electronics; Mach-Zehnder device; electro-optical waveguide modulator; input voltage swing; optical intensity modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920444
