• DocumentCode
    1090467
  • Title

    Monolithic integration of GaAs-waveguide optical intensity modulator with MESFET drive electronics

  • Author

    Bossi, D.E. ; Basilica, R.P.

  • Volume
    28
  • Issue
    8
  • fYear
    1992
  • fDate
    4/9/1992 12:00:00 AM
  • Firstpage
    702
  • Lastpage
    704
  • Abstract
    A high-performance GaAs electro-optical waveguide modulator with monolithically integrated MESFET drive electronics is reported. High-contrast (30:1) optical intensity modulation at lambda =1.15 mu m is achieved for an input voltage swing of 0.26 V in a low-loss 8 mm-electrode Mach-Zehnder device driven by an on-chip MESFET amplifier.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electro-optical devices; gallium arsenide; integrated optoelectronics; optical modulation; 0.26 V; 1.15 micron; GaAs; MESFET drive electronics; Mach-Zehnder device; electro-optical waveguide modulator; input voltage swing; optical intensity modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920444
  • Filename
    133083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090467