DocumentCode
1090485
Title
Strained InGaAs quantum well lasers grown on
Author
Wang, W.I.
Volume
28
Issue
8
fYear
1992
fDate
4/9/1992 12:00:00 AM
Firstpage
705
Lastpage
706
Abstract
The growth by molecular beam epitaxy (MBE) of AlGaAs/GaAs/InGaAs strained quantum well lasers on GaAs
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical losses; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; AlGaAs-GaAs-InGaAs; GaAs; III-V semiconductors; broad area lasers; internal loss; molecular beam epitaxy; strained quantum well lasers; surface emitting blue-green light sources; transparency current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920446
Filename
133085
Link To Document