Title :
Inverted gate GaAs MESFET by epitaxial liftoff
Author :
Chan, W.K. ; Shah, D.M. ; Gmitter, T.J. ; Caneau, Catherine
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
4/9/1992 12:00:00 AM
Abstract :
A GaAs film deposited on metal by epitaxial liftoff can form a Schottky barrier. This film is used to make a 1 mu m gate length inverted gate GaAs metal-semiconductor field-effect transistor (MESFET) that can be pinched off by the inverted gate.
Keywords :
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; GaAs; Schottky barrier; epitaxial liftoff; inverted gate MESFET; metal-semiconductor field-effect transistor; pinch off;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920448
