DocumentCode
1090503
Title
Inverted gate GaAs MESFET by epitaxial liftoff
Author
Chan, W.K. ; Shah, D.M. ; Gmitter, T.J. ; Caneau, Catherine
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
28
Issue
8
fYear
1992
fDate
4/9/1992 12:00:00 AM
Firstpage
708
Lastpage
709
Abstract
A GaAs film deposited on metal by epitaxial liftoff can form a Schottky barrier. This film is used to make a 1 mu m gate length inverted gate GaAs metal-semiconductor field-effect transistor (MESFET) that can be pinched off by the inverted gate.
Keywords
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; GaAs; Schottky barrier; epitaxial liftoff; inverted gate MESFET; metal-semiconductor field-effect transistor; pinch off;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920448
Filename
133087
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