DocumentCode :
1090575
Title :
Benefits of real-time, in situ particle monitoring in production medium current implantation
Author :
Borden, Peter G. ; Larson, Lawrence A.
Author_Institution :
High Yield Technol., Mountain View, CA, USA
Volume :
2
Issue :
4
fYear :
1989
fDate :
11/1/1989 12:00:00 AM
Firstpage :
141
Lastpage :
145
Abstract :
Real-time free particle measurements in the loadlocks of a production medium current implanter have been conducted. These measurements correlate to both surface scans and electrical test yield. They suggest that episodic particle generating events that impact yield occur frequently and that particle levels are considerably higher when product wafers are run than when monitor wafers are run. The data correlate to monitor wafer surface counts, allowing the real-time monitor to be used in equipment requalification. The data also provide a real-time plot of machine utilization and performance and can be useful in identifying variations in both the implant process and feeder processes. It is concluded that a strategy of in situ, real-time sampling combined with test wafer monitoring can lead to improved particle control
Keywords :
ion implantation; measurement by laser beam; monitoring; particle counting; semiconductor device manufacture; semiconductor doping; episodic particle generating events; equipment requalification; implanter loadlocks; in situ sampling; laser based sensor; particle control; particle monitoring; production medium current implantation; real time free particle measurements; real-time monitor; test wafer monitoring; Contamination; Monitoring; Particle measurements; Particle production; Pollution measurement; Process control; Pumps; Sampling methods; Sensor phenomena and characterization; Testing;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.44617
Filename :
44617
Link To Document :
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