Title :
Spontaneous emission efficiency of compressively strained 1.5 mu m MQW lasers
Author :
Adams, A.R. ; Braithwaite, J.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
4/9/1992 12:00:00 AM
Abstract :
The spontaneous emission efficiency of 1.5 mu m compressively strained MQW lasers was found to be higher than that of comparable unstrained devices. The activation energy for Auger recombination was higher in the strained devices. Both effects were explained in terms of a reduction in the hole mass by strain.
Keywords :
Auger effect; optical losses; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; Auger recombination; activation energy; compressively strained MQW lasers; hole mass; spontaneous emission efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920454
