• DocumentCode
    1090590
  • Title

    Impact ionization in Ga1-xAlxSb: An alternative interpretation

  • Author

    Kasemset, Dumrong

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, MA, USA
  • Volume
    17
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    1595
  • Lastpage
    1597
  • Abstract
    The existence of the recently proposed resonance impact ionization process in gallium aluminum antimonide is questioned. An alternative interpretation of the data originally used to support the claim for a resonant process is presented which invokes only conventional, well-established processes.
  • Keywords
    Crystalline materials; Crystals; Distribution functions; Impact ionization; Materials science and technology; Nonlinear optics; Optical films; Optical mixing; Optimized production technology; Resonance;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1071327
  • Filename
    1071327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090590