Title :
p-type thin-film transistors with vacuum-deposited crystallized copper-doped germanium films
Author :
Fischer, A.G. ; Tizabi, D.J. ; Blanke, H.
Author_Institution :
University of Dortmund, Dortmund, Germany
fDate :
12/1/1983 12:00:00 AM
Abstract :
Copper-doped 10-nm-thick vacuum-deposited Ge films between vitreous aluminosilicate insulator films can be crystallized at 400°C, with hole mobilities of 80 cm2/V.s. They yield stable p-type TFT´s with 105on/off ratio which are process-compatible with n-type CdSe TFT´s and thus usable for complementary on-board shift registers in active matrix displays.
Keywords :
Active matrix liquid crystal displays; Amorphous materials; Crystalline materials; Crystallization; Germanium; Inorganic materials; Insulation; Semiconductor materials; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25797
