An analysis of thermal behavior of bipolar-mode JFET´s

The effects of temperature on the performance of vertical JFET´s operated in the bipolar mode are investigated both theoretically and experimentally. Results demonstrate that the bipolar JFET is a good candidate in power applications in that it combines a very low saturation voltage, slowly varying with temperature, with a negative temperature coefficient of dc current amplification. The temperature effects, both on the dc current gain and on the on-resistance, are investigated with the help of a physical model of device operation; the model shows a good agreement with experimental results.