DocumentCode
1090746
Title
A self-consistent static model of the double- heterostructure laser
Author
Wilt, Daniel P. ; Yariv, Amnon
Author_Institution
California Institute of Technology, Pasadena, CA, USA
Volume
17
Issue
9
fYear
1981
fDate
9/1/1981 12:00:00 AM
Firstpage
1941
Lastpage
1949
Abstract
A new static model of the double-heterostructure laser is presented which treats the p-n junction in the laser in a consistent manner. The solution makes use of the finite-element method to treat complex diode geometries. The model is valid above lasing threshold and shows both the saturation in the diode junction voltage at threshold as well as lateral mode shifts associated with spatial hole burning. Several geometries have been analyzed and some specific results are presented as illustration.
Keywords
Semiconductor lasers; Diode lasers; Finite element methods; Geometrical optics; Laser modes; Laser theory; Optical devices; Optical materials; P-n junctions; Semiconductor diodes; Threshold voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1981.1071342
Filename
1071342
Link To Document