Title :
A self-consistent static model of the double- heterostructure laser
Author :
Wilt, Daniel P. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, CA, USA
fDate :
9/1/1981 12:00:00 AM
Abstract :
A new static model of the double-heterostructure laser is presented which treats the p-n junction in the laser in a consistent manner. The solution makes use of the finite-element method to treat complex diode geometries. The model is valid above lasing threshold and shows both the saturation in the diode junction voltage at threshold as well as lateral mode shifts associated with spatial hole burning. Several geometries have been analyzed and some specific results are presented as illustration.
Keywords :
Semiconductor lasers; Diode lasers; Finite element methods; Geometrical optics; Laser modes; Laser theory; Optical devices; Optical materials; P-n junctions; Semiconductor diodes; Threshold voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1071342
