DocumentCode :
1090835
Title :
An optimization procedure for the selection of diode laser facet coatings
Author :
Fye, Donald M.
Author_Institution :
GTE Lab., Inc., Waltham, MA, USA
Volume :
17
Issue :
9
fYear :
1981
fDate :
9/1/1981 12:00:00 AM
Firstpage :
1950
Lastpage :
1954
Abstract :
The relationship between the facet reflector properties and the steady-state power-current characteristics of diode lasers is analyzed. A general procedure is developed for calculating the facet reflectance values that optimize the electrical-to-optical power conversion efficiency of a diode laser emitting a specified value of optical power. Numerical examples are presented which apply this technique to the selection of facet coatings for a typical diode laser. The diode laser with optimized facet reflectances is shown to have lower internal power dissipation than devices with uncoated or half-wave coated facets. The properties of Al2O3/Si multilayer facet coatings are investigated, with special attention given to the effects produced by optical absorption in the amorphous silicon layers.
Keywords :
Coatings; Semiconductor lasers; Absorption; Amorphous silicon; Coatings; Diode lasers; Nonhomogeneous media; Power conversion; Power dissipation; Reflectivity; Steady-state; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071351
Filename :
1071351
Link To Document :
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