• DocumentCode
    1090914
  • Title

    4-40 GHz MMIC distributed active combiner with 3 dB gain

  • Author

    Majidi-Ahy, R. ; Nishimoto, C. ; Russell, John ; Ou, Weixin ; Bandy, S. ; Zdasiuk, G. ; Shih, Chih-Cheng ; Pao, Y.C. ; Yuen, Chau

  • Author_Institution
    Litton Solid State, Santa Clara, CA, USA
  • Volume
    28
  • Issue
    8
  • fYear
    1992
  • fDate
    4/9/1992 12:00:00 AM
  • Firstpage
    739
  • Lastpage
    741
  • Abstract
    The development of a 4-40 GHz monolithic InP HEMT distributed active combiner is reported. This MMIC had an average gain of 3.0 dB from each input, and a minimum reverse isolation of 20 dB from 4 to 40 GHz. The active devices in this MMIC were 0.25 mu m lattice-matched InGaAs-InAlAs-InP HEMTs. CPW was used as the transmission medium with an overall chip dimension of 1.0*1.0 mm2.
  • Keywords
    III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; 0.25 micron; 3 dB; 4 to 40 GHz; CPW; HEMT; InGaAs-InAlAs-InP; MMIC; distributed active combiner; lattice-matched; monolithic microwave IC;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920468
  • Filename
    133107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1090914