Title :
Interaction of cobalt and field oxide during low temperature furnace annealing
Author :
Chen, Bor-Sen ; Chen, M.-C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/9/1992 12:00:00 AM
Abstract :
The interaction of cobalt and thermally grown field oxide (5000 AA) during low temperature furnace annealing (600-800 degrees C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters form in the silicon substrate when the annealing temperature exceeds 700 degrees C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600 degrees C.
Keywords :
annealing; cobalt; semiconductor technology; silicon compounds; 5000 AA; 600 to 800 degC; Co-SiO 2-Si; CoSi 2; field oxide; isolation function; low temperature furnace annealing; s-pit clusters; selfaligned silicide scheme; thermally grown oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920478
