DocumentCode
1091055
Title
Improvement of responsivity of high-speed infrared detector using hot carriers in semiconductors
Author
Kikuchi, Kazuo ; Oshimoto, Ainosuke ; Furukawa, Seijiro
Author_Institution
Dept. of Electrical Engineering, National Defense Academy, Yokosuka, Japan
Volume
18
Issue
1
fYear
1982
fDate
1/1/1982 12:00:00 AM
Firstpage
90
Lastpage
95
Abstract
A room temperature, high-speed and high-sensitive infrared hot carrier detector using p-type Ge has been investigated at 10.6 μm. The detector is composed of a whisker antenna and a diode contact forming an ohmic contact on p-type Ge. This detector has the merit that one can easily have impedance matching between the antenna and the diode contact without any matching section, so that high sensitivity can be obtained. A voltage sensitivity 16 dB higher than that of metal-insulator-metal (MIM) point contact diode has been observed from this detector.
Keywords
Germanium radiation detectors; Infrared detectors; Aperture antennas; Hot carriers; Impedance matching; Infrared detectors; Radiation detectors; Reflector antennas; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1982.1071373
Filename
1071373
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