Title :
Ultrafast dynamic properties of quantum dot semiconductor optical amplifiers including line broadening and carrier heating
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
Abstract :
The static and dynamic characteristics of quantum dot semiconductor optical amplifiers were investigated taking into account the effect of inhomogeneous line broadening, carrier relaxation between the dot energy states and carrier heating. Size fluctuation was observed to significantly reduce the optical gain, increase the transparency current of the amplifier and reduce the ultrafast gain compression. It was found that the ultrafast gain recovery strongly depends on carrier heating.
Keywords :
carrier relaxation time; fluctuations; high-speed optical techniques; quantum dot lasers; semiconductor device models; semiconductor optical amplifiers; spectral line broadening; transparency; carrier heating; dot energy states; line broadening; optical gain; quantum dot semiconductor optical amplifiers; size fluctuation; static characteristics; transparency current; ultrafast dynamic properties; ultrafast gain compression; ultrafast gain recovery;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040637
