• DocumentCode
    1091108
  • Title

    A better understanding of CMOS latch-up

  • Author

    Hu, Genda J.

  • Author_Institution
    Xerox Palo Alto Research Center, Palo Alto, CA
  • Volume
    31
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    62
  • Lastpage
    67
  • Abstract
    Both lumped-element two-transistor circuit model and two-dimensional finite-element analyses are used to study the latch-up phenomena in CMOS structures. The equivalent circuit model offers a simple view on latch-up, while 2-D modeling provides more physics and quantitative understanding of latch-up. A generalized criterion for p-n-p-n latch-up is derived based on the equivalent circuit. 2-D modeling confirms the latch-up triggering condition described by the criterion. Furthermore, 2-D simulation models the entire latch-up process, including the dynamic triggering stage, and determines the intrinsic steady-state I - V characteristics of p-n-p-n devices.
  • Keywords
    Circuit simulation; Equivalent circuits; Finite element methods; Inverters; Physics; Predictive models; Resistors; Semiconductor device modeling; Steady-state; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21474
  • Filename
    1483759