DocumentCode
1091108
Title
A better understanding of CMOS latch-up
Author
Hu, Genda J.
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, CA
Volume
31
Issue
1
fYear
1984
fDate
1/1/1984 12:00:00 AM
Firstpage
62
Lastpage
67
Abstract
Both lumped-element two-transistor circuit model and two-dimensional finite-element analyses are used to study the latch-up phenomena in CMOS structures. The equivalent circuit model offers a simple view on latch-up, while 2-D modeling provides more physics and quantitative understanding of latch-up. A generalized criterion for p-n-p-n latch-up is derived based on the equivalent circuit. 2-D modeling confirms the latch-up triggering condition described by the criterion. Furthermore, 2-D simulation models the entire latch-up process, including the dynamic triggering stage, and determines the intrinsic steady-state I - V characteristics of p-n-p-n devices.
Keywords
Circuit simulation; Equivalent circuits; Finite element methods; Inverters; Physics; Predictive models; Resistors; Semiconductor device modeling; Steady-state; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21474
Filename
1483759
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