Title :
Saturation currents in small-geometry bipolar transistors
Author_Institution :
Honeywell, Inc., Plymouth, MN
fDate :
1/1/1984 12:00:00 AM
Abstract :
Small-geometry transistor structures resulting from oxide-and groove-isolated processes are described. Methods for accurate determination of saturation currents are described, Experimental results from the two transistor structures are given and discussed. The results serve to demonstrate that data on saturation currents provide information useful in process control and in understanding the characteristics of small-geometry devices.
Keywords :
Bipolar transistors; Dry etching; Electron devices; Implants; Lithography; MOSFETs; Optical buffering; Parametric study; Silicon; Sun;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21477
