DocumentCode
1091150
Title
Saturation currents in small-geometry bipolar transistors
Author
Stevens, E.H.
Author_Institution
Honeywell, Inc., Plymouth, MN
Volume
31
Issue
1
fYear
1984
fDate
1/1/1984 12:00:00 AM
Firstpage
80
Lastpage
82
Abstract
Small-geometry transistor structures resulting from oxide-and groove-isolated processes are described. Methods for accurate determination of saturation currents are described, Experimental results from the two transistor structures are given and discussed. The results serve to demonstrate that data on saturation currents provide information useful in process control and in understanding the characteristics of small-geometry devices.
Keywords
Bipolar transistors; Dry etching; Electron devices; Implants; Lithography; MOSFETs; Optical buffering; Parametric study; Silicon; Sun;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21477
Filename
1483762
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