Title :
Breakdown voltage design considerations in VDMOS structures
Author :
Mena, José G. ; Salama, C. Andre T
Author_Institution :
University of Toronto, Toronto, Canada
fDate :
1/1/1984 12:00:00 AM
Abstract :
Analytical closed-form expressions for the breakdown voltage in punched-through VDMOS structures, including the effect of floating guardrings and field plates, are derived in this paper. The theoretical results are confirmed by measured data on VDMOS devices, as well as on floating-guardring diode test structures, fabricated on n/n+epitaxial substrates.
Keywords :
Avalanche breakdown; Breakdown voltage; Closed-form solution; Diodes; Doping profiles; Equations; Ionization; Substrates; Sun; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21483
