Title :
Comments on "A method for determining energy gap narrowing in highly doped semiconductors"
Author :
Del Alamo, Jesus A. ; Swanson, Richard M.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
Abstract :
The narrow temperature range used by Neugroschel et al. [1] in their determination of bandgap shrinkage in heavily doped Si leads them to overestimate this parameter by neglecting its temperature dependence. Appropriate manipulation of their data results in values in better agreement with literature.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21486
