DocumentCode :
1091293
Title :
Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices
Author :
Koren, Uziel ; Margalit, Shlomo ; Chen, T.R. ; Yu, K.L. ; Yariv, Ammon ; Bar-Chaim, Nadav ; Lau, Kam Y. ; Ury, Israel
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
18
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1653
Lastpage :
1662
Abstract :
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.
Keywords :
Electrooptic materials/devices; Gallium materials/devices; Integrated optics; Indium phosphide; Integrated optoelectronics; Light emitting diodes; Light sources; Monolithic integrated circuits; Optical detectors; Optical devices; Optoelectronic devices; Semiconductor lasers; Solid lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071397
Filename :
1071397
Link To Document :
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