DocumentCode
1091471
Title
A new method for detecting electromigration failure in VLSI metallization
Author
Rodbell, K.P. ; Shatynski, S.R.
Author_Institution
Rensselaer Polytechnic Institute, Troy, NY
Volume
31
Issue
2
fYear
1984
fDate
2/1/1984 12:00:00 AM
Firstpage
232
Lastpage
233
Abstract
A method has been developed for metallization lifetime predictions using a continuous resistance monitoring technique. A useful lifetime criteria, based upon measured resistance changes, has been determined that is more sensitive and, consequently, more accurate than present catastrophic failure techniques.
Keywords
Aluminum alloys; Condition monitoring; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electromigration; Metallization; Packaging; Transistors; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21506
Filename
1483791
Link To Document