Title :
A new method for detecting electromigration failure in VLSI metallization
Author :
Rodbell, K.P. ; Shatynski, S.R.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
fDate :
2/1/1984 12:00:00 AM
Abstract :
A method has been developed for metallization lifetime predictions using a continuous resistance monitoring technique. A useful lifetime criteria, based upon measured resistance changes, has been determined that is more sensitive and, consequently, more accurate than present catastrophic failure techniques.
Keywords :
Aluminum alloys; Condition monitoring; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electromigration; Metallization; Packaging; Transistors; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21506
