Title :
Electrochromic Device Integrated With GaInP/GaAs/Ge Triple-Junction Solar Cell
Author :
Jei-Li Hou ; Chih-Hung Wu ; Shoou-Jinn Chang
Author_Institution :
Inst. of Nucl. Energy Res., Taoyuan, Taiwan
Abstract :
We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tinoxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm2, it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively.
Keywords :
III-V semiconductors; electrochemical electrodes; electrochromic devices; elemental semiconductors; gallium arsenide; gallium compounds; germanium; glass; indium compounds; molybdenum compounds; nickel compounds; polymer gels; semiconductor junctions; solar cells; solar radiation; tin compounds; CECD solar cell fabrication; GPE; GaInP-GaAs-Ge; SiO2-ITO-NiO-MoO3-ITO-SiO2; TJ solar cell; bleached state; bleaching time; coloration time; complementary electrochromic device; gel polymer electrode; maximum transmittance; solar radiation intensity; triple-junction solar cell system; Electrochromic devices; Glass; Indium tin oxide; Lighting; Photovoltaic cells; Photovoltaic systems; Complementary electrochromic device (CECD); capacitor; complementary electrochromic device (CECD); triple junction (TJ) solar cell;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2385865
