• DocumentCode
    1091700
  • Title

    Auger recombination in quantum-well InGaAsP heterostructure lasers

  • Author

    Chiu, L.C. ; Yariv, Amnon

  • Author_Institution
    California Institute of Technology, Pasadena, CA 91125
  • Volume
    18
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1406
  • Lastpage
    1409
  • Abstract
    Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of T0at around room temperatures.
  • Keywords
    Gallium materials/lasers; Laser thermal factors; Gallium arsenide; Indium phosphide; Lattices; Light emitting diodes; Power lasers; Quantum well lasers; Radiative recombination; Stimulated emission; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071437
  • Filename
    1071437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091700