High linearity power X-band GaInP/GaAs heterojunction bipolar transistor

Author

Liu, W. ; Tae Kim ; Ikalainen, P. ; Khatibzadeh, A.

Author_Institution

Corp. Res. & Dev., Texas Instrum. Inc., Dallas, TX, USA

Volume

15

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

190

Lastpage

192

Abstract

We report for the first time two-tone test results measured on a GaInP/GaAs HBT. A 2×400 μm² device delivered more than 1.3 W under one-tone testing at 7.5 GHz and output more than 1 W under two-tone. The corresponding intermodulation product is -14 dBc, and decreases to -21 and -36 dBc, respectively, at 3-dB and 10-dB back-off from the saturated two-tone output. These results demonstrate that GaInP/GaAs HBT´s are suitable for microwave transmitter applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation; power transistors; semiconductor device testing; solid-state microwave devices; 1 W; 1.3 W; 7.5 GHz; GaInP-GaAs; X-band device; heterojunction bipolar transistor; high linearity; intermodulation product; microwave transmitter applications; power HBT; two-tone test; Bipolar transistors; Etching; Fabrication; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Testing; Time measurement; Transmitters;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.286688

Filename

286688