• DocumentCode
    1091737
  • Title

    Correspondence between MOS and modulation-doped structures

  • Author

    Pierret, R.F. ; Lundstrom, M.S.

  • Author_Institution
    Purdue University, West Lafayette, IN
  • Volume
    31
  • Issue
    3
  • fYear
    1984
  • fDate
    3/1/1984 12:00:00 AM
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    Arguments are presented clearly establishing the physical correspondence between metal-oxide-semiconductor (MOS) and metal/ AlGaAs/GaAs modulation-doped structures. Direct use of MOS formalism in modeling the modulation-doped field-effect transistor is also illustrated.
  • Keywords
    Content addressable storage; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Insulation; MODFETs; MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21533
  • Filename
    1483818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091737