Title :
Correspondence between MOS and modulation-doped structures
Author :
Pierret, R.F. ; Lundstrom, M.S.
Author_Institution :
Purdue University, West Lafayette, IN
fDate :
3/1/1984 12:00:00 AM
Abstract :
Arguments are presented clearly establishing the physical correspondence between metal-oxide-semiconductor (MOS) and metal/ AlGaAs/GaAs modulation-doped structures. Direct use of MOS formalism in modeling the modulation-doped field-effect transistor is also illustrated.
Keywords :
Content addressable storage; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Insulation; MODFETs; MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21533
