Short-channel-effect free 0.18 μm MOSFET by temperature-dimension combination scaling theory: design and experiment

We have fabricated 77 K deep-submicron MOSFETs on the basis of the temperature-dimension combination scaling theory (CST). The 77 K MOSFETs with 1-V supply voltage are designed from a 300 K MOSFET with 4-V supply voltage. The fabricated 77 K 0.18 μm device has exhibited fully scaled characteristics. The subthreshold swing (S) and the threshold voltage (V/sub th/) of the 77 K device are found to be 1/4/spl ap/77 K/300 K of those of the 300 K device. Furthermore, S and V/sub th/ are achieved to be 27 mV/dec and 0.21 V without short-channel effect degradation.