A p-channel coupled delta-doped silicon MESFET grown by molecular beam epitaxy

Author

Wang, S.J. ; Wu, S.L. ; Chung, H.D. ; Carns, T.K. ; Zheng, X. ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

15

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

206

Lastpage

208

Abstract

Experimental realization of a new p-channel Si MESFET structure, utilizing two boron /spl delta/-doped layers placed in close proximity with one another as the conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single /spl delta/-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 μm, which is a factor of 1.7 higher than the single /spl delta/-doped layer Si MESFET for the same dose in each /spl delta/-doped layer.

Keywords

Schottky gate field effect transistors; boron; carrier mobility; doping profiles; elemental semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; 1.44 mS/mm; 5 micron; B /spl delta/-doped layers; Si MESFET structure; Si:B; delta-doped Si; hole mobility; homoepitaxially grown Si structure; molecular beam epitaxy; p-channel device; sheet carrier density; transconductance; Boron; Charge carrier density; FETs; MESFETs; Molecular beam epitaxial growth; Optical coupling; Semiconductor device doping; Silicon; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.286693

Filename

286693