• DocumentCode
    109176
  • Title

    Faster-Switching GaN : Presenting a number of interesting measurement challenges

  • Author

    Sandler, Steve

  • Volume
    2
  • Issue
    2
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    24
  • Lastpage
    31
  • Abstract
    The advancement of gallium nitride (GaN) power switches brings with it a multitude of performance benefits while also providing many challenges. While GaN switches may be very close to the mainstream, our ability to perform the high-fidelity measurements necessary for characterizing, troubleshooting, and optimizing their implementation is considerably lagging.
  • Keywords
    III-V semiconductors; gallium compounds; power semiconductor switches; wide band gap semiconductors; GaN; faster-switching gallium nitride; high fidelity measurement; power switch; Bandwidth allocation; Current measurement; Gallium nitride; Power switches; Switches; Time measurement; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Power Electronics Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    2329-9207
  • Type

    jour

  • DOI
    10.1109/MPEL.2015.2420232
  • Filename
    7130770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=109176