DocumentCode :
109176
Title :
Faster-Switching GaN : Presenting a number of interesting measurement challenges
Author :
Sandler, Steve
Volume :
2
Issue :
2
fYear :
2015
fDate :
Jun-15
Firstpage :
24
Lastpage :
31
Abstract :
The advancement of gallium nitride (GaN) power switches brings with it a multitude of performance benefits while also providing many challenges. While GaN switches may be very close to the mainstream, our ability to perform the high-fidelity measurements necessary for characterizing, troubleshooting, and optimizing their implementation is considerably lagging.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor switches; wide band gap semiconductors; GaN; faster-switching gallium nitride; high fidelity measurement; power switch; Bandwidth allocation; Current measurement; Gallium nitride; Power switches; Switches; Time measurement; Voltage measurement;
fLanguage :
English
Journal_Title :
Power Electronics Magazine, IEEE
Publisher :
ieee
ISSN :
2329-9207
Type :
jour
DOI :
10.1109/MPEL.2015.2420232
Filename :
7130770
Link To Document :
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