Title :
Low temperature microwave characteristics of 0.1μm gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x=0.85 and 0.95) MODFET´s
Author :
Yang, D. ; Bhattacharya, P.K. ; Brock, T. ; Alterovitz, S.A. ; Taub, S.R. ; Young, P.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
We have studied the microwave characteristics of 0.1μm gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x=0.85 and 0.95) modulation-doped field-effect transistors (MODFET´s) at 300 K and lower temperatures down to 77 K. A maximum f/sub T/ of 151 GHz has been measured for a 0.1×55 μm/sup 2/ gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.85/Ga/sub 0.15/As MODFET at 77 K and this represents an improvement of 33% over the room temperature value. This behavior has been analyzed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 151 GHz; 77 to 300 K; In/sub 0.52/Al/sub 0.48/As-In/sub 0.85/Ga/sub 0.15/As; low temperature characteristics; microwave characteristics; modulation-doped field-effect transistors; pseudomorphic MODFET; Electrons; HEMTs; Indium phosphide; MODFETs; Microwave devices; Microwave measurements; Space technology; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
