Title :
A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications
Author :
Xie, W. ; Cooper, J.A., Jr. ; Melloch, M.R. ; Palmour, J.W. ; Carter, C.H., Jr.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
A vertically integrated one transistor memory cell, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, based on the wide-bandgap semiconductor silicon carbide (SiC), results in a greatly reduced thermal generation rate. Extrapolation of charge recovery data obtained at elevated temperatures suggests a room temperature recovery time of over 10/sup 6/ years.<>
Keywords :
bipolar integrated circuits; integrated memory circuits; random-access storage; semiconductor materials; silicon compounds; 6H SiC; NVRAM; SiC; charge recovery data; n-p-n bipolar access transistor; nonvolatile memory applications; one transistor memory cell; p-n-p storage capacitor; room temperature recovery time; thermal generation rate; vertically integrated bipolar storage cell; wide-bandgap semiconductor; Capacitors; Circuits; Ion implantation; Nitrogen; Nonvolatile memory; Prototypes; Random access memory; Read-write memory; Silicon carbide; Temperature;
Journal_Title :
Electron Device Letters, IEEE
