Title :
Low field mobility in GaAs ion-implanted FET´s
Author :
Lee, Kahyun ; Shur, Michael S. ; Lee, Kahyun ; Vu, Tuong Thuy ; Roberts, P.C.T. ; Helix, M.J.
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
3/1/1984 12:00:00 AM
Abstract :
We describe a new technique which allows one to deduce the mobility profiles under the gate of an ion-implanted GaAs MESFET. The technique is based on the measurements of the transconductance and the series resistance at very low drain-to-source voltages. The experimental results show that the mobility drops to about 1000 cm2/V . s at the channel interface from its maximum value of about 2500 cm2/ V . s.
Keywords :
Doping profiles; Electrical resistance measurement; Equivalent circuits; FETs; Fabrication; Gallium arsenide; Government; Low voltage; MESFETs; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21537
