1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor

Author

Liu, William ; Beam, Edward, III ; Khatibzadeh, Ali

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

Volume

15

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

215

Lastpage

217

Abstract

We report the first large-signal power result from a double heterojunction bipolar transistor (DHBT) based on the GaInP/GaAs/GaInP material system. A CW output power of 1.51 W and a power added efficiency of 52% were achieved at 3 GHz. Because the GaInP collector has a relatively high bandgap of 1.89 eV, high DC bias voltage operation with collector bias extending to 20 V (for a 40-V swing) is possible in this GaInP/GaAs/GaInP DHBT. This high DC bias voltage operation represents a unique advantage over the more conventional AlGaAs/GaAs HBT.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 1.5 W; 1.89 eV; 20 V; 3 GHz; 52 percent; CW output power; DHBT; GaInP-GaAs-GaInP; HBT; S-band; double heterojunction bipolar transistor; high DC bias voltage operation; large-signal power; Breakdown voltage; Double heterojunction bipolar transistors; Gallium arsenide; Gold; Heterojunction bipolar transistors; Knee; Molecular beam epitaxial growth; Photonic band gap; Power generation; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.286696

Filename

286696